Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.ssc.2012.10.023
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dc.titleAn improved effective-mass-theory equation for phosphorus doped in silicon
dc.contributor.authorHui, H.T.
dc.date.accessioned2014-10-07T04:23:36Z
dc.date.available2014-10-07T04:23:36Z
dc.date.issued2013-01
dc.identifier.citationHui, H.T. (2013-01). An improved effective-mass-theory equation for phosphorus doped in silicon. Solid State Communications 154 (1) : 19-24. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ssc.2012.10.023
dc.identifier.issn00381098
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81950
dc.description.abstractA new multi-valley effective-mass-theory (EMT) equation is derived for the phosphorus doped in silicon. This equation admits solutions which agree with the measured ground state energy and the square modulus of the ground-state wavefunction ΨA1(0)2 at the donor site accurately. This avoids the use of the so-called central-cell correction approximation method to calculate the hyperfine constant at the donor site. Furthermore, the energy levels for the upper lying states of T2 and E can also be predicted relatively accurately. The newly derived EMT equation has applications in the characterization of semiconductor or spintronics devices. © 2012 Elsevier Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.ssc.2012.10.023
dc.sourceScopus
dc.subjectA. Semiconductor impurity
dc.subjectA. Solid-state physics
dc.subjectC. Effective-mass theory (EMT)
dc.subjectD. Central-cell correction
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.ssc.2012.10.023
dc.description.sourcetitleSolid State Communications
dc.description.volume154
dc.description.issue1
dc.description.page19-24
dc.description.codenSSCOA
dc.identifier.isiut000314202800005
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