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https://doi.org/10.1016/j.ssc.2012.10.023
Title: | An improved effective-mass-theory equation for phosphorus doped in silicon | Authors: | Hui, H.T. | Keywords: | A. Semiconductor impurity A. Solid-state physics C. Effective-mass theory (EMT) D. Central-cell correction |
Issue Date: | Jan-2013 | Citation: | Hui, H.T. (2013-01). An improved effective-mass-theory equation for phosphorus doped in silicon. Solid State Communications 154 (1) : 19-24. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ssc.2012.10.023 | Abstract: | A new multi-valley effective-mass-theory (EMT) equation is derived for the phosphorus doped in silicon. This equation admits solutions which agree with the measured ground state energy and the square modulus of the ground-state wavefunction ΨA1(0)2 at the donor site accurately. This avoids the use of the so-called central-cell correction approximation method to calculate the hyperfine constant at the donor site. Furthermore, the energy levels for the upper lying states of T2 and E can also be predicted relatively accurately. The newly derived EMT equation has applications in the characterization of semiconductor or spintronics devices. © 2012 Elsevier Ltd. | Source Title: | Solid State Communications | URI: | http://scholarbank.nus.edu.sg/handle/10635/81950 | ISSN: | 00381098 | DOI: | 10.1016/j.ssc.2012.10.023 |
Appears in Collections: | Staff Publications |
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