Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1812835
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dc.titleAlternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric
dc.contributor.authorWu, N.
dc.contributor.authorZhang, Q.
dc.contributor.authorZhu, C.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLi, M.F.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorChin, A.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:23:32Z
dc.date.available2014-10-07T04:23:32Z
dc.date.issued2004-11-01
dc.identifier.citationWu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Li, M.F., Balasubramanian, N., Chin, A., Kwong, D.-L. (2004-11-01). Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric. Applied Physics Letters 85 (18) : 4127-4129. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1812835
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81945
dc.description.abstractAn alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied. The surface SiH 4 annealing was implemented prior to HfO 2 deposition. X-ray photoelectron spectroscopy analysis results show that the SiH 4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the HfO 2 deposition. The electrical measurement shows that an equivalent oxide thickness of 13.5 Å and a leakage current of 1.16 × 10 -5 A/cm 2 at 1 V gate bias was achieved for TaN/HfO 2/Ge MOS capacitors with the SiH 4 surface treatment. © 2004 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1812835
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1812835
dc.description.sourcetitleApplied Physics Letters
dc.description.volume85
dc.description.issue18
dc.description.page4127-4129
dc.description.codenAPPLA
dc.identifier.isiut000224894900057
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