AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process

Abstract

This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-todrain L GD spacing of 5 μm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance R on of 3mΩ.cm 2. In addition, subthreshold swing S of ∼97 mV/decade and I on=I off ratio of ∼10 6 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing L GD of less than 10 μm, the V BR achieved in this work is the highest. © 2012 The Japan Society of Applied Physics.