Please use this identifier to cite or link to this item: https://doi.org/10.1143/APEX.5.066501
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dc.titleAlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process
dc.contributor.authorLiu, X.
dc.contributor.authorZhan, C.
dc.contributor.authorChan, K.W.
dc.contributor.authorLiu, W.
dc.contributor.authorTan, L.S.
dc.contributor.authorChen, K.J.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:23:32Z
dc.date.available2014-10-07T04:23:32Z
dc.date.issued2012-06
dc.identifier.citationLiu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Chen, K.J., Yeo, Y.-C. (2012-06). AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process. Applied Physics Express 5 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.5.066501
dc.identifier.issn18820778
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81944
dc.description.abstractThis letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-todrain L GD spacing of 5 μm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance R on of 3mΩ.cm 2. In addition, subthreshold swing S of ∼97 mV/decade and I on=I off ratio of ∼10 6 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing L GD of less than 10 μm, the V BR achieved in this work is the highest. © 2012 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/APEX.5.066501
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/APEX.5.066501
dc.description.sourcetitleApplied Physics Express
dc.description.volume5
dc.description.issue6
dc.description.page-
dc.identifier.isiut000305134200040
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