Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2012.2210855
DC Field | Value | |
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dc.title | A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture | |
dc.contributor.author | Tran, X.A. | |
dc.contributor.author | Zhu, W. | |
dc.contributor.author | Liu, W.J. | |
dc.contributor.author | Yeo, Y.C. | |
dc.contributor.author | Nguyen, B.Y. | |
dc.contributor.author | Yu, H.Y. | |
dc.date.accessioned | 2014-10-07T04:23:07Z | |
dc.date.available | 2014-10-07T04:23:07Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y. (2012). A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture. IEEE Electron Device Letters 33 (10) : 1402-1404. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2210855 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81909 | |
dc.description.abstract | In this letter, a bipolar resistive switching RAM based on Ni/AlOy/\hboxn+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state ( > 700 at 0.2 V), a high on/off resistance ratio (> \hbox103), a good retention characteristic (> \hbox104\ \hboxs at 100 \circC ), and a wide readout margin for cross-bar architecture (number of word line N > \hbox2 5 for worst case condition). © 2012 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2012.2210855 | |
dc.source | Scopus | |
dc.subject | Bipolar | |
dc.subject | resistive random access memory (RRAM) | |
dc.subject | resistive switching (RS) | |
dc.subject | self-rectifying | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2012.2210855 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 33 | |
dc.description.issue | 10 | |
dc.description.page | 1402-1404 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000309364600023 | |
Appears in Collections: | Staff Publications |
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