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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2012.2210855
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dc.titleA self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
dc.contributor.authorTran, X.A.
dc.contributor.authorZhu, W.
dc.contributor.authorLiu, W.J.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorNguyen, B.Y.
dc.contributor.authorYu, H.Y.
dc.date.accessioned2014-10-07T04:23:07Z
dc.date.available2014-10-07T04:23:07Z
dc.date.issued2012
dc.identifier.citationTran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y. (2012). A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture. IEEE Electron Device Letters 33 (10) : 1402-1404. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2210855
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81909
dc.description.abstractIn this letter, a bipolar resistive switching RAM based on Ni/AlOy/\hboxn+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state ( > 700 at 0.2 V), a high on/off resistance ratio (> \hbox103), a good retention characteristic (> \hbox104\ \hboxs at 100 \circC ), and a wide readout margin for cross-bar architecture (number of word line N > \hbox2 5 for worst case condition). © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2012.2210855
dc.sourceScopus
dc.subjectBipolar
dc.subjectresistive random access memory (RRAM)
dc.subjectresistive switching (RS)
dc.subjectself-rectifying
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2012.2210855
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume33
dc.description.issue10
dc.description.page1402-1404
dc.description.codenEDLED
dc.identifier.isiut000309364600023
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