Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.2010585
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dc.titleA modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs
dc.contributor.authorHuang, D.
dc.contributor.authorLiu, W.J.
dc.contributor.authorLiu, Z.Y.
dc.contributor.authorLiao, C.C.
dc.contributor.authorZhang, L.-F.
dc.contributor.authorGan, Z.
dc.contributor.authorWong, W.
dc.contributor.authorLi, M.-F.
dc.date.accessioned2014-10-07T04:22:49Z
dc.date.available2014-10-07T04:22:49Z
dc.date.issued2009
dc.identifier.citationHuang, D., Liu, W.J., Liu, Z.Y., Liao, C.C., Zhang, L.-F., Gan, Z., Wong, W., Li, M.-F. (2009). A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs. IEEE Transactions on Electron Devices 56 (2) : 267-274. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2010585
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81883
dc.description.abstractA novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (∼ tn of interface-trap generation is observed. The index n is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2008.2010585
dc.sourceScopus
dc.subjectCharge pumping (CP)
dc.subjectInterface traps
dc.subjectMOSFETs
dc.subjectNegative-bias temperature instability (NBTI)
dc.subjectReaction-diffusion model
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2008.2010585
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume56
dc.description.issue2
dc.description.page267-274
dc.description.codenIETDA
dc.identifier.isiut000262816800016
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