Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2008.2010585
DC Field | Value | |
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dc.title | A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs | |
dc.contributor.author | Huang, D. | |
dc.contributor.author | Liu, W.J. | |
dc.contributor.author | Liu, Z.Y. | |
dc.contributor.author | Liao, C.C. | |
dc.contributor.author | Zhang, L.-F. | |
dc.contributor.author | Gan, Z. | |
dc.contributor.author | Wong, W. | |
dc.contributor.author | Li, M.-F. | |
dc.date.accessioned | 2014-10-07T04:22:49Z | |
dc.date.available | 2014-10-07T04:22:49Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Huang, D., Liu, W.J., Liu, Z.Y., Liao, C.C., Zhang, L.-F., Gan, Z., Wong, W., Li, M.-F. (2009). A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs. IEEE Transactions on Electron Devices 56 (2) : 267-274. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2010585 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81883 | |
dc.description.abstract | A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (∼ tn of interface-trap generation is observed. The index n is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics. © 2009 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2008.2010585 | |
dc.source | Scopus | |
dc.subject | Charge pumping (CP) | |
dc.subject | Interface traps | |
dc.subject | MOSFETs | |
dc.subject | Negative-bias temperature instability (NBTI) | |
dc.subject | Reaction-diffusion model | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TED.2008.2010585 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 56 | |
dc.description.issue | 2 | |
dc.description.page | 267-274 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | 000262816800016 | |
Appears in Collections: | Staff Publications |
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