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https://scholarbank.nus.edu.sg/handle/10635/81837
| Title: | A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS | Authors: | Bi, X. Guo, Y. Xiong, Y.Z. Arasu, M.A. Je, M. |
Keywords: | Cascode low noise amplifier (LNA) q-enhanced shape-factor (SF) SiGe BiCMOS |
Issue Date: | 2013 | Citation: | Bi, X., Guo, Y., Xiong, Y.Z., Arasu, M.A., Je, M. (2013). A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS. IEEE Microwave and Wireless Components Letters 23 (5) : 261-263. ScholarBank@NUS Repository. | Abstract: | In this letter, a high-gain and selectivity W-band LNA using 0.13 μm SiGe BiCMOS is proposed. A Q-enhanced cascode approach with a filter synthesis passband-forming technique was employed to achieve gain and selectivity improvement simultaneously. The amplifier achieved a gain of above 45 dB and a noise figure of 6-8.3 dB at 77-101 GHz with a power consumption of 19.2 mW. The LNA has high selectivity with a 3 dB-to-35 dB shape factor of 2.1, which is comparable with silicon-based passive millimeter-wave filters. © 2001-2012 IEEE. | Source Title: | IEEE Microwave and Wireless Components Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/81837 | ISSN: | 15311309 |
| Appears in Collections: | Staff Publications |
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