A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS

Abstract

In this letter, a high-gain and selectivity W-band LNA using 0.13 μm SiGe BiCMOS is proposed. A Q-enhanced cascode approach with a filter synthesis passband-forming technique was employed to achieve gain and selectivity improvement simultaneously. The amplifier achieved a gain of above 45 dB and a noise figure of 6-8.3 dB at 77-101 GHz with a power consumption of 19.2 mW. The LNA has high selectivity with a 3 dB-to-35 dB shape factor of 2.1, which is comparable with silicon-based passive millimeter-wave filters. © 2001-2012 IEEE.