Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81837
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dc.titleA 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
dc.contributor.authorBi, X.
dc.contributor.authorGuo, Y.
dc.contributor.authorXiong, Y.Z.
dc.contributor.authorArasu, M.A.
dc.contributor.authorJe, M.
dc.date.accessioned2014-10-07T04:22:17Z
dc.date.available2014-10-07T04:22:17Z
dc.date.issued2013
dc.identifier.citationBi, X., Guo, Y., Xiong, Y.Z., Arasu, M.A., Je, M. (2013). A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS. IEEE Microwave and Wireless Components Letters 23 (5) : 261-263. ScholarBank@NUS Repository.
dc.identifier.issn15311309
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81837
dc.description.abstractIn this letter, a high-gain and selectivity W-band LNA using 0.13 μm SiGe BiCMOS is proposed. A Q-enhanced cascode approach with a filter synthesis passband-forming technique was employed to achieve gain and selectivity improvement simultaneously. The amplifier achieved a gain of above 45 dB and a noise figure of 6-8.3 dB at 77-101 GHz with a power consumption of 19.2 mW. The LNA has high selectivity with a 3 dB-to-35 dB shape factor of 2.1, which is comparable with silicon-based passive millimeter-wave filters. © 2001-2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LMWC.2013.2251620
dc.sourceScopus
dc.subjectCascode
dc.subjectlow noise amplifier (LNA)
dc.subjectq-enhanced
dc.subjectshape-factor (SF)
dc.subjectSiGe BiCMOS
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleIEEE Microwave and Wireless Components Letters
dc.description.volume23
dc.description.issue5
dc.description.page261-263
dc.description.codenIMWCB
dc.identifier.isiut000319004000013
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