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|Title:||A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS||Authors:||Bi, X.
low noise amplifier (LNA)
|Issue Date:||2013||Citation:||Bi, X., Guo, Y., Xiong, Y.Z., Arasu, M.A., Je, M. (2013). A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS. IEEE Microwave and Wireless Components Letters 23 (5) : 261-263. ScholarBank@NUS Repository.||Abstract:||In this letter, a high-gain and selectivity W-band LNA using 0.13 μm SiGe BiCMOS is proposed. A Q-enhanced cascode approach with a filter synthesis passband-forming technique was employed to achieve gain and selectivity improvement simultaneously. The amplifier achieved a gain of above 45 dB and a noise figure of 6-8.3 dB at 77-101 GHz with a power consumption of 19.2 mW. The LNA has high selectivity with a 3 dB-to-35 dB shape factor of 2.1, which is comparable with silicon-based passive millimeter-wave filters. © 2001-2012 IEEE.||Source Title:||IEEE Microwave and Wireless Components Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81837||ISSN:||15311309|
|Appears in Collections:||Staff Publications|
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