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|Title:||Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure||Authors:||Hou, Yong Tian
Teo, Kie Leong
Li, Ming Fu
|Issue Date:||1999||Citation:||Hou, Yong Tian,Teo, Kie Leong,Li, Ming Fu,Uchida, Kazuo,Tokunaga, Hiroki,Akutsu, Nakao,Matsumoto, Koh (1999). Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure. Proceedings of SPIE - The International Society for Optical Engineering 3899 : 46-53. ScholarBank@NUS Repository.||Abstract:||Contactless electroreflectance (CER) of a GaN/InGaN/AlGaN multilayer structure grown on sapphire has been measured in the temperature range of 15 K and 450 K. Except for the GaN exciton structures, well-defined Franz-Keldysh Oscillations (FKO's) are observed above the AlGaN band gap. An electromodulational model based on complex Airy functions is used to analyze the FKO's line shape. The temperature dependence of transition energies is obtained both for GaN and AlGaN. The magnitude of the built in electric field in AlGaN layer is also determined. The temperature dependence of the electric field is found to be consistent with the variation of thermal strain in the epilayer. It is demonstrated that the built-in electric field can be identified to be due to the piezoelectric effect.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/81676||ISSN:||0277786X|
|Appears in Collections:||Staff Publications|
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