Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81600
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dc.titleNew spectroscopic photon emission microscope system for semiconductor device analysis
dc.contributor.authorLiu, Y.Y.
dc.contributor.authorTao, J.M.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorChim, W.K.
dc.date.accessioned2014-10-07T03:10:01Z
dc.date.available2014-10-07T03:10:01Z
dc.date.issued1995
dc.identifier.citationLiu, Y.Y.,Tao, J.M.,Chan, D.S.H.,Phang, J.C.H.,Chim, W.K. (1995). New spectroscopic photon emission microscope system for semiconductor device analysis. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 60-65. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81600
dc.description.abstractThis paper describes the design and performance of a new spectroscopic photon emission microscope system (SPEMS) with panchromatic imaging and continuous wavelength spectroscopic capabilities. Very low levels of light emissions from biased devices can be detected and high resolution spectral characteristics can be analysed because of the highly efficient light collection and transmission optics. Results shown include that of MOS transistors biased in saturation, forward and reverse biased pn junctions and oxide leakage. The potential use of the 'defect finger-printing' technique, whereby a unique spectral signature is assigned to each failure mechanism, is also discussed.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
dc.description.page60-65
dc.description.coden234
dc.identifier.isiutNOT_IN_WOS
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