Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81596
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dc.titleNew purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
dc.contributor.authorLeang, S.E.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorChim, W.K.
dc.date.accessioned2014-10-07T03:09:59Z
dc.date.available2014-10-07T03:09:59Z
dc.date.issued1996
dc.identifier.citationLeang, S.E.,Chan, D.S.H.,Chim, W.K. (1996). New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs. Annual Proceedings - Reliability Physics (Symposium) : 311-317. ScholarBank@NUS Repository.
dc.identifier.issn00999512
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81596
dc.description.abstractA new charge-pumping technique to extract the spatial distribution of hot-carrier-induced interface states and trapped charges in MOS devices is proposed. This method is purely experimental and does not require simulation, and therefore can be applied to any MOSFET without the detailed knowledge of the device's structure. With this method, one is able to gain a better understanding of the degradation mechanisms taking place during hot-carrier stress.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleAnnual Proceedings - Reliability Physics (Symposium)
dc.description.page311-317
dc.description.codenARLPB
dc.identifier.isiutNOT_IN_WOS
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