Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81549
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dc.titleModelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETs
dc.contributor.authorLou, C.L.
dc.contributor.authorQin, W.H.
dc.contributor.authorChim, W.K.
dc.contributor.authorChan, D.S.H.
dc.date.accessioned2014-10-07T03:09:30Z
dc.date.available2014-10-07T03:09:30Z
dc.date.issued1997
dc.identifier.citationLou, C.L.,Qin, W.H.,Chim, W.K.,Chan, D.S.H. (1997). Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETs. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 127-132. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81549
dc.description.abstractHot-carrier injection is observed to increasingly degrade the subthreshold characteristics with the scaling of LDD PMOSFETs. A physical subthreshold current model is applied to the fresh and hot-carrier stressed submicrometer channel length devices. The generated interface traps and channel length reduction are subsequently extracted. An empirical model is developed to characterize the degradation parameters as a function of stress time and channel length. With the use of this model, we can determine the degradation parameters and hence predict the minimum allowable channel length (for a certain percentage of degradation and lifetime) that is applicable for a specific technology.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA
dc.description.page127-132
dc.description.coden234
dc.identifier.isiutNOT_IN_WOS
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