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|Title:||Latent damage investigation on lateral non-uniform charge generation and stress-induced leakage current in silicon dioxides subjected to low-level electrostatic discharge impulse stressing||Authors:||Lim, P.S.
|Issue Date:||1999||Citation:||Lim, P.S.,Chim, W.K. (1999). Latent damage investigation on lateral non-uniform charge generation and stress-induced leakage current in silicon dioxides subjected to low-level electrostatic discharge impulse stressing. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 156-161. ScholarBank@NUS Repository.||Abstract:||This paper reports on the generation of positive lateral non-uniform (LNU) charges in silicon dioxide (SiO2), following low-level electrostatic discharge (ESD) stress using a transmission line pulsing technique. Using an array of charged equivalent small-area MOS capacitors with similar areas to represent the LNU charges, we can explain the effect of LNU charges on the experimental high frequency C-V (HFCV) curves. The formation of LNU charges was attributed to the localized injection of avalanche hot-carriers from the silicon substrate together with the accompanying impact ionization within the oxide. A short stressing pulse duration was found to be critical for the LNU-charge formation, as uniform charge trapping will result for longer duration stress pulses. A relationship between the generated LNU charges and stress-induced leakage current (SILC) was also observed and discussed in this article.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/81520|
|Appears in Collections:||Staff Publications|
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