Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81465
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dc.titleImaging of charging specimens at high beam energies in the SEM
dc.contributor.authorWong, W.K.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorThong, J.T.L.
dc.date.accessioned2014-10-07T03:08:36Z
dc.date.available2014-10-07T03:08:36Z
dc.date.issued1995
dc.identifier.citationWong, W.K.,Phang, J.C.H.,Thong, J.T.L. (1995). Imaging of charging specimens at high beam energies in the SEM. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 55-59. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81465
dc.description.abstractThis paper describes a novel method to observe charging specimens at high beam voltages without specimen preparation. It was found that the technique greatly reduces charging artifacts such as raster faults, discharge streaks, astigmatism and defocussing without sacrificing image quality. Images obtained of uncoated specimens are found to be comparable to gold-coated specimens and without exhibiting charging effects.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
dc.description.page55-59
dc.description.coden234
dc.identifier.isiutNOT_IN_WOS
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