Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81459
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dc.titleHot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETs
dc.contributor.authorLou, C.L.
dc.contributor.authorChim, W.K.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorPan, Y.
dc.date.accessioned2014-10-07T03:08:33Z
dc.date.available2014-10-07T03:08:33Z
dc.date.issued1995
dc.identifier.citationLou, C.L.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1995). Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETs. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 86-90. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81459
dc.description.abstractHot-carrier injection is shown to degrade the subthreshold operation of LDD PMOSFETs. Hot-carrier injection is observed to increasingly degrade the subthreshold leakage and subthreshold slope as the LDD PMOSFETs are scaled to smaller dimensions. A physical model, based on the channel shortening effect of degraded PMOSFETs, is used to model the degradation characteristics observed. Degradation in the subthreshold characteristics of PMOSFETs is expected to limit the life of PMOSFETs as its channel length is reduced to half-a-micrometer.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
dc.description.page86-90
dc.description.coden234
dc.identifier.isiutNOT_IN_WOS
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