Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.47.13868
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dc.titleVelocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures
dc.contributor.authorTan, L.S.
dc.contributor.authorChua, S.J.
dc.contributor.authorArora, V.K.
dc.date.accessioned2014-10-07T03:07:19Z
dc.date.available2014-10-07T03:07:19Z
dc.date.issued1993
dc.identifier.citationTan, L.S., Chua, S.J., Arora, V.K. (1993). Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures. Physical Review B 47 (20) : 13868-13871. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.47.13868
dc.identifier.issn01631829
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81347
dc.description.abstractRecent experimental observations indicating poor correlation between the saturation velocity and Ohmic mobility lead us to propose a theory for a velocity-limiting mechanism in quantum-well heterostructures. The theory is based on the distribution function which takes into account the electron-drift anisotropy introduced by the high electric field for a degenerately doped quantum well. The drift velocity is shown to be limited by the Fermi velocity; a result which indicates that the saturation velocity is independent of the low-field mobility which is strongly controlled by momentum-randomizing scattering events. The dominance of optical-phonon emission at high electric field lowers the saturation velocity below the Fermi velocity. Excellent agreement is obtained between the theoretical and experimental results on the velocity-field characteristics of GaAs/AlxGa1-xAs quantum-well heterostructures. © 1993 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.47.13868
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1103/PhysRevB.47.13868
dc.description.sourcetitlePhysical Review B
dc.description.volume47
dc.description.issue20
dc.description.page13868-13871
dc.identifier.isiutA1993LF06900100
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