Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1798191
DC FieldValue
dc.titleUniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
dc.contributor.authorHo, C.S.
dc.contributor.authorPey, K.L.
dc.contributor.authorTung, C.H.
dc.contributor.authorZhang, B.C.
dc.contributor.authorTee, K.C.
dc.contributor.authorKarunasiri, G.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T03:07:09Z
dc.date.available2014-10-07T03:07:09Z
dc.date.issued2004
dc.identifier.citationHo, C.S., Pey, K.L., Tung, C.H., Zhang, B.C., Tee, K.C., Karunasiri, G., Chua, S.J. (2004). Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction. Electrochemical and Solid-State Letters 7 (11) : H49-H51. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1798191
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81331
dc.description.abstractVoid free epitaxial-CoSi 2 with nano-thickness has been successfully fabricated on narrow Si(lOO) substrates surrounded by shallow trench isolation (STI) using a capped titanium mediated epitaxy method. The suicide is epitaxial with a CoSi 2(110)IISi( 100) crystal orientation. Void growth in the narrow silicon lines under the film edges due to an anomalous creep effect in the presence of a localized tensile stress between CoSi 2 and Si was suppressed completely by optimizing the initial rapid thermal annealing (RTA) thermal budget, and ensuring that no voids nucleated prior to the selective wet clean and second higher-temperature RTA process. The epitaxial Co-silicided n/p metal oxide semiconductor field effect transistors show excellent device performance. © 2004 The Electrochemical Society, All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.1798191
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.1798191
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume7
dc.description.issue11
dc.description.pageH49-H51
dc.description.codenESLEF
dc.identifier.isiut000228539900049
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Page view(s)

41
checked on Sep 8, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.