Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1798191
Title: Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
Authors: Ho, C.S.
Pey, K.L.
Tung, C.H.
Zhang, B.C.
Tee, K.C.
Karunasiri, G. 
Chua, S.J. 
Issue Date: 2004
Citation: Ho, C.S., Pey, K.L., Tung, C.H., Zhang, B.C., Tee, K.C., Karunasiri, G., Chua, S.J. (2004). Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction. Electrochemical and Solid-State Letters 7 (11) : H49-H51. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1798191
Abstract: Void free epitaxial-CoSi 2 with nano-thickness has been successfully fabricated on narrow Si(lOO) substrates surrounded by shallow trench isolation (STI) using a capped titanium mediated epitaxy method. The suicide is epitaxial with a CoSi 2(110)IISi( 100) crystal orientation. Void growth in the narrow silicon lines under the film edges due to an anomalous creep effect in the presence of a localized tensile stress between CoSi 2 and Si was suppressed completely by optimizing the initial rapid thermal annealing (RTA) thermal budget, and ensuring that no voids nucleated prior to the selective wet clean and second higher-temperature RTA process. The epitaxial Co-silicided n/p metal oxide semiconductor field effect transistors show excellent device performance. © 2004 The Electrochemical Society, All rights reserved.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81331
ISSN: 10990062
DOI: 10.1149/1.1798191
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