Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.114807
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dc.titleTwo types of local oxide/substrate defects in very thin silicon dioxide films on silicon
dc.contributor.authorLau, W.S.
dc.contributor.authorSane, V.
dc.contributor.authorPey, K.S.
dc.contributor.authorCronquist, B.
dc.date.accessioned2014-10-07T03:06:58Z
dc.date.available2014-10-07T03:06:58Z
dc.date.issued1995
dc.identifier.citationLau, W.S., Sane, V., Pey, K.S., Cronquist, B. (1995). Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon. Applied Physics Letters 67 : 2854-. ScholarBank@NUS Repository. https://doi.org/10.1063/1.114807
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81314
dc.description.abstractThe local oxide defects observed in thin silicon dioxide films on p-type Si were studied with the electron beam induced current/tunneling current microscopy technique. Excluding pinholes, all the local defects observed are local oxide/substrate defects, i.e., local oxide defects propagated from defects in the Si substrate into the SiO2. It was observed that local oxide/substrate defects can be further differentiated into two different types by studying the transition from the true oxide electron beam induced current contrast to the tunneling current microscopy contrast.© 1995 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.114807
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1063/1.114807
dc.description.sourcetitleApplied Physics Letters
dc.description.volume67
dc.description.page2854-
dc.identifier.isiutA1995TC98500035
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