Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.114807
DC Field | Value | |
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dc.title | Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon | |
dc.contributor.author | Lau, W.S. | |
dc.contributor.author | Sane, V. | |
dc.contributor.author | Pey, K.S. | |
dc.contributor.author | Cronquist, B. | |
dc.date.accessioned | 2014-10-07T03:06:58Z | |
dc.date.available | 2014-10-07T03:06:58Z | |
dc.date.issued | 1995 | |
dc.identifier.citation | Lau, W.S., Sane, V., Pey, K.S., Cronquist, B. (1995). Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon. Applied Physics Letters 67 : 2854-. ScholarBank@NUS Repository. https://doi.org/10.1063/1.114807 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81314 | |
dc.description.abstract | The local oxide defects observed in thin silicon dioxide films on p-type Si were studied with the electron beam induced current/tunneling current microscopy technique. Excluding pinholes, all the local defects observed are local oxide/substrate defects, i.e., local oxide defects propagated from defects in the Si substrate into the SiO2. It was observed that local oxide/substrate defects can be further differentiated into two different types by studying the transition from the true oxide electron beam induced current contrast to the tunneling current microscopy contrast.© 1995 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.114807 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1063/1.114807 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 67 | |
dc.description.page | 2854- | |
dc.identifier.isiut | A1995TC98500035 | |
Appears in Collections: | Staff Publications |
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