Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/81301
DC Field | Value | |
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dc.title | Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes | |
dc.contributor.author | Rao, R.V.V.V.J. | |
dc.contributor.author | Chong, T.C. | |
dc.contributor.author | Tan, L.S. | |
dc.contributor.author | Lau, W.S. | |
dc.contributor.author | Lim, N. | |
dc.date.accessioned | 2014-10-07T03:06:50Z | |
dc.date.available | 2014-10-07T03:06:50Z | |
dc.date.issued | 1999-09 | |
dc.identifier.citation | Rao, R.V.V.V.J.,Chong, T.C.,Tan, L.S.,Lau, W.S.,Lim, N. (1999-09). Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes. International Journal of Electronics 86 (9) : 1039-1050. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00207217 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81301 | |
dc.description.abstract | Low temperature (LT)-grown GaAs and Al0.3Ga0.7 As metal-insulator-n+-GaAs (MIN) diodes have been fabricated and their electrical properties analyzed. Studies were carried out to evaluate the interfacial quality of the LT layer and the underlying n+-GaAs layer using transient current spectroscopy (TCS) and capacitance-frequency (C-f) characterization. TCS studies on LT-GaAs revealed a high concentration of a continuum of states and a dominant electron trap with an activation energy of 0.52 eV. In LT-Al0.3Ga0.7As, a shallow trap at 0.36 eV and two deep level traps at 0.85 eV and 1.12 eV were observed. Frequency dispersion was observed to be less for LT-GaAs samples with an AlAs barrier layer than without an AlAs barrier layer. However, LT-Al0.3Ga0.7As MIN diodes displayed a smaller frequency dispersion than LT-GaAs MIN diodes. Upon further investigation into MISFET devices, it was found that LT-Al0.3Ga0.7As MISFET devices had better transconductance frequency dispersion characteristics than LT-GaAs MISFET devices did. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.contributor.department | CENTRE FOR WIRELESS COMMUNICATIONS | |
dc.description.sourcetitle | International Journal of Electronics | |
dc.description.volume | 86 | |
dc.description.issue | 9 | |
dc.description.page | 1039-1050 | |
dc.description.coden | IJELA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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