Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81281
Title: Thermal studies on stress-induced void-like defects in epitaxial-CoSi 2 formation
Authors: Ho, C.S.
Pey, K.L. 
Tung, C.H.
Tee, K.C.
Prasad, K.
Saigal, D.
Tan, J.J.L.
Wong, H.
Lee, K.H.
Osipowicz, T. 
Chua, S.J. 
Karunasiri, R.P.G. 
Issue Date: 1999
Citation: Ho, C.S.,Pey, K.L.,Tung, C.H.,Tee, K.C.,Prasad, K.,Saigal, D.,Tan, J.J.L.,Wong, H.,Lee, K.H.,Osipowicz, T.,Chua, S.J.,Karunasiri, R.P.G. (1999). Thermal studies on stress-induced void-like defects in epitaxial-CoSi 2 formation. Materials Research Society Symposium - Proceedings 564 : 109-116. ScholarBank@NUS Repository.
Abstract: We report experimental findings on the thermal-induced stress-voiding observed during epitaxial CoSi 2 formation on patterned Si(100) wafers associated with the Co/Ti-interposing layer scheme [1-6]. The first rapid thermal process (RTP) in a typical SALICIDE process was studied by varying the temperature and the RTP ramp-up rate. Based on ex-situ cross-sectional transmission electron microscopy (XTEM), crystal defects were observed at shallow trench isolation (STI)/Si and gate spacer/Si edges after annealing at temperatures greater than 520°C. In addition, isothermal anneals for various time periods resulted in increased encroachment of an ultra-thin CoSi 2-phase at the STI/Si edge. Higher temperature anneals also resulted in a corresponding increase in void size. In addition, higher ramp-up rates led to a thicker CoSi 2 "pocket" film at the tensile-stressed STI/Si edge, aligned epitaxially along the {111}-habit planes. Our attempts to bypass the CoSi formation in order to alleviate the anomalous Si diffusion was found to be irrelevant to the voiding issue, due to the inherent nature of this film stack system to nucleate CoSi 2 as the first phase. By comparing our experimental observations of voiding with Hu's analysis of the trench isolation stress fields, we found good agreement with the predicted stress field distribution in the active Si and STI/Si edge with the locations of void nucleation. The anomalously large stress induced is still not known, but can be attributed to the encroaching CoSi 2 film which tends to realign epitaxially along the STI/Si interface. © 1999 Materials Research Society.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/81281
ISSN: 02729172
Appears in Collections:Staff Publications

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