Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.753708
DC FieldValue
dc.titleThe role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET's
dc.contributor.authorAng, D.S.
dc.contributor.authorLing, C.H.
dc.date.accessioned2014-10-07T03:06:24Z
dc.date.available2014-10-07T03:06:24Z
dc.date.issued1999
dc.identifier.citationAng, D.S., Ling, C.H. (1999). The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET's. IEEE Transactions on Electron Devices 46 (4) : 738-746. ScholarBank@NUS Repository. https://doi.org/10.1109/16.753708
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81259
dc.description.abstractThe generation of interface traps in p-MOSFET's subjected to hot-electron injection is found to proceed even after the stress has been terminated. The extent of post-stress interface trap generation is strongly dependent on the magnitude of the preceding hot-electron stress, as well as the magnitude and polarity of the gate voltage during relaxation. Trap generation is enhanced for negative gate voltage anneal, but suppressed for positive gate voltage anneal. For a given stress-induced damage, the corresponding trap generation kinetics can be completely described by a single characteristic, which is shifted in time according to the magnitude of the applied gate voltage. Existing interface trap generation models are discussed in the light of the experimental results. A new model involving the tunneling of holes from the inversion layer to deep-level electron traps is proposed. Similar post-stress effect observed for hot-electron stressed n-MOSFET's provides additional support for the model. Our work suggests that near-interface electron traps, apart from the well-known hole traps, may also significantly affect the longterm stability of the Si-SiO2 interface. © 1999 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.753708
dc.sourceScopus
dc.subjectElectron traps
dc.subjectHot-electron injection
dc.subjectInterface traps
dc.subjectMOSFET's
dc.subjectPost-stress effect
dc.subjectSi-SiO2 interface
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentBACHELOR OF TECHNOLOGY PROGRAMME
dc.description.doi10.1109/16.753708
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume46
dc.description.issue4
dc.description.page738-746
dc.description.codenIETDA
dc.identifier.isiut000079394700018
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