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https://scholarbank.nus.edu.sg/handle/10635/81242
| Title: | Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures | Authors: | Chua, S.J. Tang, X.H. Xu, S.J. |
Keywords: | A. Semiconductor D. Optical properties E. Luminescence |
Issue Date: | Jun-1997 | Citation: | Chua, S.J.,Tang, X.H.,Xu, S.J. (1997-06). Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures. Solid State Communications 102 (10) : 739-742. ScholarBank@NUS Repository. | Abstract: | Competing emissions arising from e-h recombinations within the same layer (spatial-direct) and across layers (spatial-indirect) in AlxGa1-xAs n-i-p-i doping structures have been studied using photoluminescence (PL). The emission from spatial-indirect transitions dominate at low temperatures ( | Source Title: | Solid State Communications | URI: | http://scholarbank.nus.edu.sg/handle/10635/81242 | ISSN: | 00381098 |
| Appears in Collections: | Staff Publications |
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