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|Title:||Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures||Authors:||Chua, S.J.
D. Optical properties
|Issue Date:||Jun-1997||Citation:||Chua, S.J.,Tang, X.H.,Xu, S.J. (1997-06). Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures. Solid State Communications 102 (10) : 739-742. ScholarBank@NUS Repository.||Abstract:||Competing emissions arising from e-h recombinations within the same layer (spatial-direct) and across layers (spatial-indirect) in AlxGa1-xAs n-i-p-i doping structures have been studied using photoluminescence (PL). The emission from spatial-indirect transitions dominate at low temperatures (||Source Title:||Solid State Communications||URI:||http://scholarbank.nus.edu.sg/handle/10635/81242||ISSN:||00381098|
|Appears in Collections:||Staff Publications|
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