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https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-L
Title: | Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix | Authors: | Jie, Y.X. Wu, X. Huan, C.H.A. Wee, A.T.S. Guo, Y. Zhang, T.J. Pan, J.S. Chai, J. Chua, S.J. |
Issue Date: | 1999 | Citation: | Jie, Y.X.,Wu, X.,Huan, C.H.A.,Wee, A.T.S.,Guo, Y.,Zhang, T.J.,Pan, J.S.,Chai, J.,Chua, S.J. (1999). Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix. Surface and Interface Analysis 28 (1) : 195-199. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-L | Abstract: | Germanium nanocrystals immersed in amorphous SiOx matrix have been synthesized by r.f. co-sputter deposition of Ge and quartz with post-growth annealing at 600-900 °C. The structures of the Ge nanocrystals and SiOx matrix have been studied with x-ray diffraction, high-resolution transmission electron microscopy and XPS depth profiling. Broad-band photoluminescence spectra have been observed from samples annealed at temperatures higher than 600 °C. Possible photoluminescence mechanisms have also been discussed. | Source Title: | Surface and Interface Analysis | URI: | http://scholarbank.nus.edu.sg/handle/10635/81238 | ISSN: | 01422421 | DOI: | 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-L |
Appears in Collections: | Staff Publications |
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