Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-L
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dc.titleSynthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix
dc.contributor.authorJie, Y.X.
dc.contributor.authorWu, X.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorGuo, Y.
dc.contributor.authorZhang, T.J.
dc.contributor.authorPan, J.S.
dc.contributor.authorChai, J.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T03:06:10Z
dc.date.available2014-10-07T03:06:10Z
dc.date.issued1999
dc.identifier.citationJie, Y.X.,Wu, X.,Huan, C.H.A.,Wee, A.T.S.,Guo, Y.,Zhang, T.J.,Pan, J.S.,Chai, J.,Chua, S.J. (1999). Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix. Surface and Interface Analysis 28 (1) : 195-199. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-L" target="_blank">https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-L</a>
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81238
dc.description.abstractGermanium nanocrystals immersed in amorphous SiOx matrix have been synthesized by r.f. co-sputter deposition of Ge and quartz with post-growth annealing at 600-900 °C. The structures of the Ge nanocrystals and SiOx matrix have been studied with x-ray diffraction, high-resolution transmission electron microscopy and XPS depth profiling. Broad-band photoluminescence spectra have been observed from samples annealed at temperatures higher than 600 °C. Possible photoluminescence mechanisms have also been discussed.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-L
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-L
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume28
dc.description.issue1
dc.description.page195-199
dc.description.codenSIAND
dc.identifier.isiutNOT_IN_WOS
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