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|Title:||Substrate orientation effect on Zn δ-doping in GaAs grown by metal organic vapour-phase epitaxy||Authors:||Li, G.
|Issue Date:||15-Jul-1998||Citation:||Li, G.,Prince, K.E.,Petravic, M.,Chua, S.J.,Jagadish, C. (1998-07-15). Substrate orientation effect on Zn δ-doping in GaAs grown by metal organic vapour-phase epitaxy. Journal of Crystal Growth 191 (3) : 357-360. ScholarBank@NUS Repository.||Abstract:||The substrate orientation dependence of Zn incorporation on the nongrowing surface in the AsH3 containing ambient was investigated using Zn δ-doped layers in GaAs grown by metal organic vapour-phase epitaxy (MOVPE). We found that the Zn δ-doping concentration significantly decreases with an increase of the (1 0 0) off-angle towards (1 1 1)B along the [0 1 1] direction. The Zn incorporation on the nongrowing As-terminated (1 1 1)B surface is negligible. A notable increase of the Zn incorporation was observed with increasing the (1 0 0) off-angle towards (1 1 1)A, while the maximum Zn δ-doping concentration was obtained on the (3 1 1)A surface. The Zn density decreases with a further increase in the (1 0 0) off-angle towards (1 1 1)A after (3 1 1)A. Based on the bonding configurations of the nongrowing surface, the possible mechanism of orientation effect on Zn incorporation is discussed. © 1998 Elsevier Science B.V. All rights reserved.||Source Title:||Journal of Crystal Growth||URI:||http://scholarbank.nus.edu.sg/handle/10635/81231||ISSN:||00220248|
|Appears in Collections:||Staff Publications|
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