Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/81227
Title: | Structural study of plasma enhanced chemical vapour deposited silicon carbide films | Authors: | Choi, W.K. Gangadharan, S. |
Keywords: | Annealing Chemical vapour Vapour deposited |
Issue Date: | 1-Jun-2000 | Citation: | Choi, W.K.,Gangadharan, S. (2000-06-01). Structural study of plasma enhanced chemical vapour deposited silicon carbide films. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 75 (2-3) : 174-176. ScholarBank@NUS Repository. | Abstract: | The effect of the molar gas ratio (X = C2H2/(C2H2 + SiH4)) and rf power on the structural properties of plasma enhanced chemical vapour deposited hydrogenated amorphous silicon carbide films has been investigated. The deposition rate was found to increase as either X or rf power increases. The value of n reduces as either X or the rf power increases. It was concluded that high carbon concentration increases the disorder in the film and increases the gap value. The IR results show Si-C bond increases with an increase in rf power or a decrease in X. The value of Si-H bond decreases and C-H bond increases with increases in X. Annealing increases the Si-C bond but reduces the Si-H and C-H bonds. © 2000 Elsevier Science S.A. All rights reserved. | Source Title: | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/81227 | ISSN: | 09215107 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.