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|Title:||Structural and electrical characterisations of rapid thermal annealed thin silicon oxide films on silicon||Authors:||Chan, Y.M.
|Issue Date:||1-Apr-1998||Citation:||Chan, Y.M.,Choo, C.K.,Choi, W.K. (1998-04-01). Structural and electrical characterisations of rapid thermal annealed thin silicon oxide films on silicon. Thin Solid Films 317 (1-2) : 219-222. ScholarBank@NUS Repository.||Abstract:||An investigation of the structural and electrical properties of rapid thermal annealed silicon-silicon oxide (Si-SiO2) systems has been carried out. The oxide thickness is between 200-500 Å. Infrared spectroscopy was used in the structural analysis. The electrical characterisations were carried out using the capacitance versus voltage (C-V) and the conductance versus voltage (G-V) methods. For the thermal oxides samples, it was found that in general, there is an increase in the number of fixed charges (Nf) after rapid thermal annealing (RTA). Sample annealed at 700°C shows an increase in the interface trap density (Dit) as compared to the as-grown sample. For samples annealed at 900°C and above, the Dit decreased as compared with the unannealed sample. For oxides prepared with the r.f. sputtering technique, it was observed that the as-prepared sample was very leaky and it was not possible to carry out the C-V or G-V measurements. However, after RTA the insulating property and Dit of the sputtered oxides improved significantly. © 1998 Elsevier Science S.A.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/81222||ISSN:||00406090|
|Appears in Collections:||Staff Publications|
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