Please use this identifier to cite or link to this item:
Title: Six-parameter DC GaAs FET model for nonlinear circuit simulation
Authors: Cao, J.
Lin, F.
Kooi, P.S. 
Leong, M.S. 
Keywords: Field effect transistors
Gallium arsenide
Semiconductor device models
Issue Date: 9-Oct-1997
Citation: Cao, J.,Lin, F.,Kooi, P.S.,Leong, M.S. (1997-10-09). Six-parameter DC GaAs FET model for nonlinear circuit simulation. Electronics Letters 33 (21) : 1825-1827. ScholarBank@NUS Repository.
Abstract: By emphasising the aspects of simplicity and accuracy for GaAs FET modelling, a six-parameter DC GaAs FET model is developed. Good agreement between simulated and measured data is obtained.
Source Title: Electronics Letters
ISSN: 00135194
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jul 5, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.