Please use this identifier to cite or link to this item:
|Title:||Six-parameter DC GaAs FET model for nonlinear circuit simulation||Authors:||Cao, J.
|Keywords:||Field effect transistors
Semiconductor device models
|Issue Date:||9-Oct-1997||Citation:||Cao, J.,Lin, F.,Kooi, P.S.,Leong, M.S. (1997-10-09). Six-parameter DC GaAs FET model for nonlinear circuit simulation. Electronics Letters 33 (21) : 1825-1827. ScholarBank@NUS Repository.||Abstract:||By emphasising the aspects of simplicity and accuracy for GaAs FET modelling, a six-parameter DC GaAs FET model is developed. Good agreement between simulated and measured data is obtained.||Source Title:||Electronics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81192||ISSN:||00135194|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 5, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.