Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81192
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dc.titleSix-parameter DC GaAs FET model for nonlinear circuit simulation
dc.contributor.authorCao, J.
dc.contributor.authorLin, F.
dc.contributor.authorKooi, P.S.
dc.contributor.authorLeong, M.S.
dc.date.accessioned2014-10-07T03:05:38Z
dc.date.available2014-10-07T03:05:38Z
dc.date.issued1997-10-09
dc.identifier.citationCao, J.,Lin, F.,Kooi, P.S.,Leong, M.S. (1997-10-09). Six-parameter DC GaAs FET model for nonlinear circuit simulation. Electronics Letters 33 (21) : 1825-1827. ScholarBank@NUS Repository.
dc.identifier.issn00135194
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81192
dc.description.abstractBy emphasising the aspects of simplicity and accuracy for GaAs FET modelling, a six-parameter DC GaAs FET model is developed. Good agreement between simulated and measured data is obtained.
dc.sourceScopus
dc.subjectField effect transistors
dc.subjectGallium arsenide
dc.subjectSemiconductor device models
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleElectronics Letters
dc.description.volume33
dc.description.issue21
dc.description.page1825-1827
dc.description.codenELLEA
dc.identifier.isiutNOT_IN_WOS
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