Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81185
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dc.titleSingle contact electron beam induced currents (scebic) in semiconductor junctions. Part I: Quantitative verification of scebic model
dc.contributor.authorKolachina, S.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorChan, D.S.H.
dc.date.accessioned2014-10-07T03:05:34Z
dc.date.available2014-10-07T03:05:34Z
dc.date.issued1998-06
dc.identifier.citationKolachina, S.,Phang, J.C.H.,Chan, D.S.H. (1998-06). Single contact electron beam induced currents (scebic) in semiconductor junctions. Part I: Quantitative verification of scebic model. Solid-State Electronics 42 (6) : 957-962. ScholarBank@NUS Repository.
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81185
dc.description.abstractSingle contact electron beam induced current (SCEBIC) transients have been obtained from a semiconductor junction for varying electron beam currents. The transients are shown to match a previously proposed model that postulates the existence of a parasitic capacitance between the unconnected junction region and the electrostatic ground. An experimental method to quantitatively verify the SCEBIC model and to extract relevant parameters is presented. The limitations of the model are discussed. © 1998 Elsevier Science Ltd. All rights reserved.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleSolid-State Electronics
dc.description.volume42
dc.description.issue6
dc.description.page957-962
dc.description.codenSSELA
dc.identifier.isiutNOT_IN_WOS
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