Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/81174
DC Field | Value | |
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dc.title | SIMULATION OF INHOMOGENEOUS BROADENING AND MODE-BEATING EFFECTS IN SEMICONDUCTOR LASERS. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Loh, W.H. | |
dc.date.accessioned | 2014-10-07T03:05:27Z | |
dc.date.available | 2014-10-07T03:05:27Z | |
dc.date.issued | 1988-08 | |
dc.identifier.citation | Chua, S.J.,Loh, W.H. (1988-08). SIMULATION OF INHOMOGENEOUS BROADENING AND MODE-BEATING EFFECTS IN SEMICONDUCTOR LASERS.. IEE proceedings. Part J, Optoelectronics 135 (4) : 310-317. ScholarBank@NUS Repository. | |
dc.identifier.issn | 02673932 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81174 | |
dc.description.abstract | A model is proposed in which the conduction band is discretised into energy intervals corresponding to longitudinal-mode separations for the simulation of inhomogeneous broadening and mode beating effects in semiconductor lasers. Four first-order relaxation processes are proposed to take account of intraband relaxations, and mode beating is included as a separate nonlinear gain term in the rate equations. In addition to the usual results of spectral-hole burning, single longitudinal-mode stabilisation and increased damping of relaxation oscillations, the model also accounts for the excitation of nonadjacent longitudinal modes experimentally observed at high bias in narrow planar-stripe lasers and the temperature dependence of spectral behaviour in CSP lasers. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | IEE proceedings. Part J, Optoelectronics | |
dc.description.volume | 135 | |
dc.description.issue | 4 | |
dc.description.page | 310-317 | |
dc.description.coden | IPJOE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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