1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81173
DC FieldValue
dc.titleSimulation of charge pumping current in hot-carrier degraded p-MOSFET's
dc.contributor.authorSamudra, G.S.
dc.contributor.authorYip, Anselm
dc.contributor.authorSee, L.K.
dc.date.accessioned2014-10-07T03:05:26Z
dc.date.available2014-10-07T03:05:26Z
dc.date.issued1998
dc.identifier.citationSamudra, G.S.,Yip, Anselm,See, L.K. (1998). Simulation of charge pumping current in hot-carrier degraded p-MOSFET's. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 32-36. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81173
dc.description.abstractCharge pumping is a widely used method of evaluating the Si/SiO2 interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. Two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are also substantiated with the measurement results.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.description.page32-36
dc.description.coden267
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.