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|Title:||Simulation of charge pumping current in hot-carrier degraded p-MOSFET's||Authors:||Samudra, G.S.
|Issue Date:||1998||Citation:||Samudra, G.S.,Yip, Anselm,See, L.K. (1998). Simulation of charge pumping current in hot-carrier degraded p-MOSFET's. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 32-36. ScholarBank@NUS Repository.||Abstract:||Charge pumping is a widely used method of evaluating the Si/SiO2 interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. Two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are also substantiated with the measurement results.||Source Title:||IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE||URI:||http://scholarbank.nus.edu.sg/handle/10635/81173|
|Appears in Collections:||Staff Publications|
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