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|Title:||Shot noise characteristics of a resonant tunnelling diode||Authors:||Sheng, Hanyu
|Issue Date:||1994||Citation:||Sheng, Hanyu, Chua, Soo-Jin (1994). Shot noise characteristics of a resonant tunnelling diode. Journal of Physics D: Applied Physics 27 (1) : 137-141. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/27/1/021||Abstract:||The shot noise characteristics of a resonant tunnelling diode are calculated from the model which includes the effects of the effective transmission coefficient of electrons in the conduction band and in the subband of the accumulation layer in the emitter. The transit time is formulated for a double barrier structure. However, the transit time for electrons at the Fermi level and the subband of the emitter are different because of the energy difference. The results show that the shot noise spectrum is independent of the frequency at low and intermediate frequencies and dependent on the frequency at high frequencies.||Source Title:||Journal of Physics D: Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/81159||ISSN:||00223727||DOI:||10.1088/0022-3727/27/1/021|
|Appears in Collections:||Staff Publications|
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