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Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.798052
DC FieldValue
dc.titleRole of hole fluence in gate oxide breakdown
dc.contributor.authorLi, M.F.
dc.contributor.authorHe, Y.D.
dc.contributor.authorMa, S.G.
dc.contributor.authorCho, B.-J.
dc.contributor.authorLo, K.F.
dc.contributor.authorXu, M.Z.
dc.date.accessioned2014-10-07T03:04:54Z
dc.date.available2014-10-07T03:04:54Z
dc.date.issued1999-11
dc.identifier.citationLi, M.F., He, Y.D., Ma, S.G., Cho, B.-J., Lo, K.F., Xu, M.Z. (1999-11). Role of hole fluence in gate oxide breakdown. IEEE Electron Device Letters 20 (11) : 586-588. ScholarBank@NUS Repository. https://doi.org/10.1109/55.798052
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81122
dc.description.abstractA simple model which links the primary hole and Fowler-Nordheim (FN) electron injections to oxide breakdown is established and the calculation based on this model is in good agreement with our experiments. When the sum of the active trap density Dpri due to primary hole injection and the active trap density Dn due to FN electron injection reaches a critical value Dcri, the oxide breaks down. The hole is two orders of magnitude more effective than FN electron in causing breakdown. These new findings are imperative in predicting oxide reliability and device lifetime.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.798052
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/55.798052
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume20
dc.description.issue11
dc.description.page586-588
dc.description.codenEDLED
dc.identifier.isiut000083431700015
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