Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0921-5107(99)00487-0
DC FieldValue
dc.titleRandom telegraphic signals in rapid thermal annealed silicon-silicon oxide system
dc.contributor.authorChim, W.K.
dc.contributor.authorChoi, W.K.
dc.contributor.authorLeong, K.K.
dc.contributor.authorTeh, L.K.
dc.date.accessioned2014-10-07T03:04:08Z
dc.date.available2014-10-07T03:04:08Z
dc.date.issued2000-03-15
dc.identifier.citationChim, W.K., Choi, W.K., Leong, K.K., Teh, L.K. (2000-03-15). Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 72 (2) : 135-137. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(99)00487-0
dc.identifier.issn09215107
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81052
dc.description.abstractRandom telegraphic signals (RTS) have been observed in large-area aluminium-silicon oxide-silicon capacitors, rapid thermal annealed (RTA) in argon at 600-700°C for 50 s. The noise spectra of these devices at higher biases showed a Lorenztian spectrum between 30-400 Hz. We suggested that the RTA process has produced weak spots in the devices. The filling and emptying process of a trap near the weak spot modulates the barrier height and resulted in the RTS and Lorentzian spectrum observed in these devices.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0921-5107(99)00487-0
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1016/S0921-5107(99)00487-0
dc.description.sourcetitleMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.description.volume72
dc.description.issue2
dc.description.page135-137
dc.description.codenMSBTE
dc.identifier.isiut000086130900016
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