Please use this identifier to cite or link to this item:
|Title:||Prediction of semiconductor material properties by the properties of their constituent chemical elements||Authors:||Heng, K.L.
|Issue Date:||Jun-2000||Citation:||Heng, K.L., Chua, S.J., Wu, P. (2000-06). Prediction of semiconductor material properties by the properties of their constituent chemical elements. Chemistry of Materials 12 (6) : 1648-1653. ScholarBank@NUS Repository.||Abstract:||We demonstrate that it is possible to predict the semiconductor material properties, like lattice constant and band gap energy, from their chemical stoichiometries and fundamental element properties of the constituents. We use a correlation technique to show that band gap energy is strongly correlated to electronegativity and pseudopotential radii whereas the lattice constant is strongly correlated to melting temperature and atomic number. Prediction of band gap energy and lattice constant of some III-V and II-VI semiconductors is made on the basis of the developed correlation model. The technique can also be applied to predict bulk properties of ternary or quaternary semiconductors.||Source Title:||Chemistry of Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/81012||ISSN:||08974756|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 26, 2018
WEB OF SCIENCETM
checked on Dec 31, 2018
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.