Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/14/5/004
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dc.titlePhotoreflectance study on the surface states of n-type GaN
dc.contributor.authorLiu, W.
dc.contributor.authorLi, M.F.
dc.contributor.authorChua, S.J.
dc.contributor.authorAkutsu, N.
dc.contributor.authorMatsumoto, K.
dc.date.accessioned2014-10-07T03:03:21Z
dc.date.available2014-10-07T03:03:21Z
dc.date.issued1999-05
dc.identifier.citationLiu, W., Li, M.F., Chua, S.J., Akutsu, N., Matsumoto, K. (1999-05). Photoreflectance study on the surface states of n-type GaN. Semiconductor Science and Technology 14 (5) : 399-402. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/14/5/004
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80979
dc.description.abstractPhotoreflectance spectroscopy was used to study n-type GaN epilayers with doping concentrations ranging from 3×1017 cm-3 to 5×1018 cm-3. The relative change of reflectance signal |ΔR/R| was investigated as a function of doping concentration ND. The value of log10(|ΔR/R|) was found to be proportional to log10 (ND) with a slope of -1.2±0.2. This result can be explained by a simple model based on an assumption that low-density surface states exist in the surface of GaN. The result may clarify certain issues in the existing Schottky barrier experiments.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1088/0268-1242/14/5/004
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume14
dc.description.issue5
dc.description.page399-402
dc.description.codenSSTEE
dc.identifier.isiut000080303700005
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