Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/80976
DC Field | Value | |
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dc.title | Photoreflectance study of Au-Schottky contacts on n-GaN | |
dc.contributor.author | Liu, W. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Chua, S.-J. | |
dc.contributor.author | Akutsu, N. | |
dc.contributor.author | Matsumoto, K. | |
dc.date.accessioned | 2014-10-07T03:03:19Z | |
dc.date.available | 2014-10-07T03:03:19Z | |
dc.date.issued | 1999-04 | |
dc.identifier.citation | Liu, W.,Li, M.-F.,Chua, S.-J.,Akutsu, N.,Matsumoto, K. (1999-04). Photoreflectance study of Au-Schottky contacts on n-GaN. Journal of Electronic Materials 28 (4) : 360-363. ScholarBank@NUS Repository. | |
dc.identifier.issn | 03615235 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80976 | |
dc.description.abstract | Semi-transparent Au-Schottky contacts on n-GaN were fabricated and studied by room-temperature photoreflectance spectroscopy. A significant difference was observed in the photoreflectance spectra before and after the evaporation of Au-Schottky contacts. This can be interpreted due to the formation of Schottky barrier at the interface between Au and GaN. Furthermore, for the higher doping sample, Franz-Keldysh oscillations were observed in the photoreflectance, which allowed the accurate determination of Au-Schottky barrier height on GaN. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Journal of Electronic Materials | |
dc.description.volume | 28 | |
dc.description.issue | 4 | |
dc.description.page | 360-363 | |
dc.description.coden | JECMA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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