Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80970
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dc.titlePerformance of titanium and amorphous germanium microbolometer infrared detectors
dc.contributor.authorRamakrishna, M.V.S.
dc.contributor.authorKarunasiri, G.
dc.contributor.authorSridhar, U.
dc.contributor.authorChen, G.
dc.date.accessioned2014-10-07T03:03:15Z
dc.date.available2014-10-07T03:03:15Z
dc.date.issued1999
dc.identifier.citationRamakrishna, M.V.S.,Karunasiri, G.,Sridhar, U.,Chen, G. (1999). Performance of titanium and amorphous germanium microbolometer infrared detectors. Proceedings of SPIE - The International Society for Optical Engineering 3666 : 415-420. ScholarBank@NUS Repository.
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80970
dc.description.abstractThere is a considerable interest in recent years on microbolometer infrared detectors, due to the possibility of operating them at room temperature and the compatibility with CMOS fabrication process. In this work, we have fabricated bolometers with Ti and a:Ge as the sensing elements using a CMOS compatible process. Noise measurements indicate that detectivity D* of over 1.5×109 cmHz1/2W-1 and 4×109 cmHz1/2W-1 at 30 Hz could be realized for a:Ge and Ti bolometers, respectively. With further improvements in design and processing, it is estimated that bolometer focal plane arrays (FPAs) with noise equivalent temperature difference (NETD) of less than 50 mK are realizable using the above materials.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume3666
dc.description.page415-420
dc.description.codenPSISD
dc.identifier.isiutNOT_IN_WOS
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