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Please use this identifier to cite or link to this item: https://doi.org/10.1016/0038-1098(96)00115-9
DC FieldValue
dc.titleOptical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser
dc.contributor.authorFan, W.J.
dc.contributor.authorLi, M.F.
dc.contributor.authorChong, T.C.
dc.contributor.authorXia, J.B.
dc.date.accessioned2014-10-07T03:02:32Z
dc.date.available2014-10-07T03:02:32Z
dc.date.issued1996-05
dc.identifier.citationFan, W.J., Li, M.F., Chong, T.C., Xia, J.B. (1996-05). Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser. Solid State Communications 98 (8) : 737-740. ScholarBank@NUS Repository. https://doi.org/10.1016/0038-1098(96)00115-9
dc.identifier.issn00381098
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80901
dc.description.abstractBased on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained by a 6×6 Hamiltonian (including heavy hole, light hole and spin-orbit splitting band), optical gain and radiative current density are calculated for the strained quantum well laser structures. The compressive strain in the GaN well region strongly depresses the TM mode optical gain and enhances the TE mode optical gain.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/0038-1098(96)00115-9
dc.sourceScopus
dc.subjectA. quantum wells
dc.subjectA. semiconductors
dc.subjectD. electronic band structure
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1016/0038-1098(96)00115-9
dc.description.sourcetitleSolid State Communications
dc.description.volume98
dc.description.issue8
dc.description.page737-740
dc.description.codenSSCOA
dc.identifier.isiutA1996UJ98500012
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