Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80899
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dc.titleOptical emission spectrum analyses during pulsed laser deflash of integrated circuit packages
dc.contributor.authorHong, M.-H.
dc.contributor.authorLu, Y.-F.
dc.contributor.authorChen, Q.
dc.date.accessioned2014-10-07T03:02:31Z
dc.date.available2014-10-07T03:02:31Z
dc.date.issued1999-12-01
dc.identifier.citationHong, M.-H.,Lu, Y.-F.,Chen, Q. (1999-12-01). Optical emission spectrum analyses during pulsed laser deflash of integrated circuit packages. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (12 A) : 6750-6753. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80899
dc.description.abstractOptical emission spectrum analysis during Nd:YAG laser deflash of molding compound for integrated circuits (IC) packaging is investigated. Dependence of spectral line and band intensities for SiO molecules, Si excited atoms and ions on laser fluence is measured to study plasma species evolution. Threshold fluences for the spectral line and band appearance are also estimated. Temporally resolved optical emission spectrum analysis shows that the spectral lines and bands appear and recombine at different delay times after laser irradiation. Mechanism for spectral line generation and recombination is found to be attributed to strong collisions among plasma species. © 1999 Publication Board, Japanese Journal of Applied Physics.
dc.sourceScopus
dc.subjectIC packages
dc.subjectOptical emission spectrum
dc.subjectPlasma analysis
dc.subjectPulsed laser deflash
dc.typeArticle
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume38
dc.description.issue12 A
dc.description.page6750-6753
dc.description.codenJAPLD
dc.identifier.isiutNOT_IN_WOS
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