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|Title:||On the possibility of high density data storage based on modulation-doped electron trapping materials||Authors:||Wu, Y.
|Keywords:||Electron trapping material
|Issue Date:||1-Aug-1997||Citation:||Wu, Y.,Chong, T.C.,Beh, C.Y. (1997-08-01). On the possibility of high density data storage based on modulation-doped electron trapping materials. Japanese Journal of Applied Physics, Part 2: Letters 36 (8 PART A) : L1009-L1011. ScholarBank@NUS Repository.||Abstract:||The possibility of achieving high density two- and three-dimensional data storage based on modulation-doped electron trapping materials is discussed. The key component of the proposed memory is a modulation-doped structure of electron trapping materials in which the information storing and releasing atoms are spatially separated to such a distance that the charge transfer rate between the two types of dopants is negligibly low at zero electric field but can be either greatly increased or further reduced by an external electric field, depending on polarity of the field. A high density memory both in the two- and three-dimensional forms is suggested by using the signal-to-noise ratio analysis.||Source Title:||Japanese Journal of Applied Physics, Part 2: Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80882||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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