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https://doi.org/10.1063/1.121379
Title: | Observation of optically-active metastable defects in undoped GaN epilayers | Authors: | Xu, S.J. Li, G. Chua, S.J. Wang, X.C. Wang, W. |
Issue Date: | 1998 | Citation: | Xu, S.J., Li, G., Chua, S.J., Wang, X.C., Wang, W. (1998). Observation of optically-active metastable defects in undoped GaN epilayers. Applied Physics Letters 72 (19) : 2451-2453. ScholarBank@NUS Repository. https://doi.org/10.1063/1.121379 | Abstract: | Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor epitaxy was investigated with photoluminescence. A new metastable defect emitting blue light was found, besides the well-known yellow luminescence centers. With excitation by the 325 nm He-Cd laser, this metastable defect, at low temperature, exhibits the luminescence fatigue effect with the decay time determined to be about 6 min. When the temperature is increased to room temperature, it recovers its optically-active state. The yellow band emission increases in intensity as the blue band emission decreases in intensity. Analysis shows that this metastable center is a hole trap, and Ga vacancy is its most probable candidate. © 1998 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80852 | ISSN: | 00036951 | DOI: | 10.1063/1.121379 |
Appears in Collections: | Staff Publications |
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