Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.121379
Title: | Observation of optically-active metastable defects in undoped GaN epilayers | Authors: | Xu, S.J. Li, G. Chua, S.J. Wang, X.C. Wang, W. |
Issue Date: | 1998 | Citation: | Xu, S.J., Li, G., Chua, S.J., Wang, X.C., Wang, W. (1998). Observation of optically-active metastable defects in undoped GaN epilayers. Applied Physics Letters 72 (19) : 2451-2453. ScholarBank@NUS Repository. https://doi.org/10.1063/1.121379 | Abstract: | Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor epitaxy was investigated with photoluminescence. A new metastable defect emitting blue light was found, besides the well-known yellow luminescence centers. With excitation by the 325 nm He-Cd laser, this metastable defect, at low temperature, exhibits the luminescence fatigue effect with the decay time determined to be about 6 min. When the temperature is increased to room temperature, it recovers its optically-active state. The yellow band emission increases in intensity as the blue band emission decreases in intensity. Analysis shows that this metastable center is a hole trap, and Ga vacancy is its most probable candidate. © 1998 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80852 | ISSN: | 00036951 | DOI: | 10.1063/1.121379 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
94
checked on Jan 24, 2023
WEB OF SCIENCETM
Citations
90
checked on Jan 24, 2023
Page view(s)
133
checked on Jan 26, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.