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|Title:||Observation of optically-active metastable defects in undoped GaN epilayers||Authors:||Xu, S.J.
|Issue Date:||1998||Citation:||Xu, S.J., Li, G., Chua, S.J., Wang, X.C., Wang, W. (1998). Observation of optically-active metastable defects in undoped GaN epilayers. Applied Physics Letters 72 (19) : 2451-2453. ScholarBank@NUS Repository. https://doi.org/10.1063/1.121379||Abstract:||Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor epitaxy was investigated with photoluminescence. A new metastable defect emitting blue light was found, besides the well-known yellow luminescence centers. With excitation by the 325 nm He-Cd laser, this metastable defect, at low temperature, exhibits the luminescence fatigue effect with the decay time determined to be about 6 min. When the temperature is increased to room temperature, it recovers its optically-active state. The yellow band emission increases in intensity as the blue band emission decreases in intensity. Analysis shows that this metastable center is a hole trap, and Ga vacancy is its most probable candidate. © 1998 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80852||ISSN:||00036951||DOI:||10.1063/1.121379|
|Appears in Collections:||Staff Publications|
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