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Title: Observation of optically-active metastable defects in undoped GaN epilayers
Authors: Xu, S.J. 
Li, G.
Chua, S.J. 
Wang, X.C.
Wang, W.
Issue Date: 1998
Citation: Xu, S.J., Li, G., Chua, S.J., Wang, X.C., Wang, W. (1998). Observation of optically-active metastable defects in undoped GaN epilayers. Applied Physics Letters 72 (19) : 2451-2453. ScholarBank@NUS Repository.
Abstract: Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor epitaxy was investigated with photoluminescence. A new metastable defect emitting blue light was found, besides the well-known yellow luminescence centers. With excitation by the 325 nm He-Cd laser, this metastable defect, at low temperature, exhibits the luminescence fatigue effect with the decay time determined to be about 6 min. When the temperature is increased to room temperature, it recovers its optically-active state. The yellow band emission increases in intensity as the blue band emission decreases in intensity. Analysis shows that this metastable center is a hole trap, and Ga vacancy is its most probable candidate. © 1998 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.121379
Appears in Collections:Staff Publications

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