Please use this identifier to cite or link to this item:
|Title:||Nickel-platinum alloy monosilicidation-induced defects in n-type silicon||Authors:||Chi, D.Z.
|Issue Date:||5-Jun-2000||Citation:||Chi, D.Z.,Mangelinck, D.,Dai, J.Y.,Lahiri, S.K.,Pey, K.L.,Ho, C.S. (2000-06-05). Nickel-platinum alloy monosilicidation-induced defects in n-type silicon. Applied Physics Letters 76 (23) : 3385-3387. ScholarBank@NUS Repository.||Abstract:||Electrically active defects induced by the formation of nickel-platinum alloy monosilicide (formed at 600-800°C) has been studied in n-type silicon using deep level transient spectroscopy and transmission electron microscopy measurements. A Ni-related electron trap level at Ec-0.42 eV is observed after silicidation at 600°C or above and a Pt-related electron trap level at Ec-0.50 eV is detected after silicidation at 700°C or above. Two hole trap levels at Ev+0.22 and Ev+0.28 eV are also detected, Ev+0.22 eV level for silicidation at 700°C or above and Ev+0.28 eV level for 600 °C silicidation. For the sample silicided at 600°C, an additional electron trap level (located at Ec -0.16 eV) with a broad spectral peak is detected in the near-surface region (||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80816||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 20, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.