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Title: Nickel-platinum alloy monosilicidation-induced defects in n-type silicon
Authors: Chi, D.Z.
Mangelinck, D.
Dai, J.Y.
Lahiri, S.K.
Pey, K.L. 
Ho, C.S.
Issue Date: 5-Jun-2000
Citation: Chi, D.Z.,Mangelinck, D.,Dai, J.Y.,Lahiri, S.K.,Pey, K.L.,Ho, C.S. (2000-06-05). Nickel-platinum alloy monosilicidation-induced defects in n-type silicon. Applied Physics Letters 76 (23) : 3385-3387. ScholarBank@NUS Repository.
Abstract: Electrically active defects induced by the formation of nickel-platinum alloy monosilicide (formed at 600-800°C) has been studied in n-type silicon using deep level transient spectroscopy and transmission electron microscopy measurements. A Ni-related electron trap level at Ec-0.42 eV is observed after silicidation at 600°C or above and a Pt-related electron trap level at Ec-0.50 eV is detected after silicidation at 700°C or above. Two hole trap levels at Ev+0.22 and Ev+0.28 eV are also detected, Ev+0.22 eV level for silicidation at 700°C or above and Ev+0.28 eV level for 600 °C silicidation. For the sample silicided at 600°C, an additional electron trap level (located at Ec -0.16 eV) with a broad spectral peak is detected in the near-surface region (
Source Title: Applied Physics Letters
ISSN: 00036951
Appears in Collections:Staff Publications

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