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|Title:||Nano-scale morphology and crystallography of laser-deposited TiN thin films||Authors:||Wang, H.-D.
|Issue Date:||Nov-2000||Citation:||Wang, H.-D.,Lu, Y.-F.,Mai, Z.-H.,Ren, Z.-M. (2000-11). Nano-scale morphology and crystallography of laser-deposited TiN thin films. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 39 (11) : 6268-6271. ScholarBank@NUS Repository.||Abstract:||Titanium nitride (TIN) thin films were deposited on hydrogen-terminated silicon (100) substrates by pulsed laser ablation of a ceramic TiN target (purity: 99.9%). The crystallography and properties of the thin films are related to the substrate temperature. In the investigation, scanning tunneling microscopy (STM), X-ray diffraction (XRD) and nanoindentation were used. Nano-scale morphology of the thin films deposited at 600 °C was observed by STM using a platinum tip. The STM image showed that the TiN embryos have a uniform size of approximately 17 nm and grow into large clusters. The films grown at 600 °C have a full-width at half maximum of the TiN (200) peak in the XRD spectrum close to 0.50°. The hardness of the thin films deposited at 600 °C was as high as 26 GPa.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/80772||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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