Please use this identifier to cite or link to this item:
Title: Multi-wavelength lasers fabricated by an Al layer controlled quantum well intermixing technology
Authors: Teng, J.H.
Chua, S.J. 
Huang, Y.H.
Li, G.
Zhang, Z.H.
Saher Helmy, A.
Marsh, J.H.
Issue Date: Sep-2000
Citation: Teng, J.H.,Chua, S.J.,Huang, Y.H.,Li, G.,Zhang, Z.H.,Saher Helmy, A.,Marsh, J.H. (2000-09). Multi-wavelength lasers fabricated by an Al layer controlled quantum well intermixing technology. Journal of Applied Physics 88 (6) : 3458-3462. ScholarBank@NUS Repository.
Abstract: We report that the shift in the band gap of Al0.3Ga0.7AS/GaAs quantum well structures can be precisely controlled by an Al layer buried between a spin-on silica film and a wet-oxidized GaAs surface. The blueshift in wavelength of the Al0.3Ga0.7As/GaAs quantum well photoluminescence (PL) depends linearly on the thickness of the buried Al layer. By changing the Al layer thickness, the PL peak wavelength can be tuned from 7870 Å for the as-grown sample to 7300 and 7050 Å after 20 and 45 s rapid thermal annealing at 850°C, respectively. Applying this technology, Al layers with different thickness, i.e., no Al, 200 and 300 Å thick, were applied to the oxidized GaAs surface in three adjacent regions with 200 μm spacing on a quantum well laser structure sample. Three wavelength lasers were successfully fabricated in a single chip by a one step rapid thermal annealing. All the lasers have similar threshold current and slope efficiency. © 2000 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Mar 20, 2020

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.